20 April 1998 Optical properties and structure of porous silicon
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Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306254
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
The structure of porous silicon (PS) layers prepared in different conditions have been studied using the reflection spectroscopy. The HF post-anodization treatment was used to modify the PS structure and properties. It is found that there is a transparent film with a sharp interface above the PS layer on the samples that show an intense photoluminescence. The transparent surface layer thickness as well as the refraction indices of this layer and PS layer below it have been determined. The volume fractions of the oxide and silicon in the surface and lower PS layers have been estimated using the Lorentz-Lorentz and Maxwell-Garnet formulas.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. S. Stashhuk, V. S. Stashhuk, V. B. Shevchenko, V. B. Shevchenko, } "Optical properties and structure of porous silicon", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306254; https://doi.org/10.1117/12.306254
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