20 April 1998 Optical study on microstructure of laser-deposited Si-containing films
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Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306192
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
Optical properties of films obtained by reactive pulse laser deposition of monocrystalline Si have been studied. Transmissivity and reflectivity of these films were measured and used for calculation of their optical constants spectra. The dependencies of the spectra on reactive gas composition and pressure during sputtering let to conclude that the films prepared are composite structures containing at least two phases: SiOxNy matrix and nanocrystalline Si- particles embedded in it.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey V. Svechnikov, Sergey V. Svechnikov, E. B. Kaganovich, E. B. Kaganovich, E. G. Manoilov, E. G. Manoilov, A. A. Kudryavtsev, A. A. Kudryavtsev, Ivan Z. Indutnyi, Ivan Z. Indutnyi, } "Optical study on microstructure of laser-deposited Si-containing films", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306192; https://doi.org/10.1117/12.306192
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