20 April 1998 Oxygen concentration distribution determination in silicon wafers by semiconductor IR laser spectroscopy
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Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306260
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
IR laser spectral analysis was applied for rapid determination of oxygen concentration and its distribution in silicon wafers at room temperature by the method of scanning semiconductor laser spectroscopy. Pb1-xSnxTe injection lasers, the emitting wavelength of which was changed in the region of (lambda) equals 9.1 micrometers by current impulses of different duration and amplitude, were used. The whole square under an absorption curve to determine the absorption coefficient by all the oxygen complexes and then to evoke the oxygen concentration was taken into account. The possibility to reveal even at room temperature by the method applied the oxygen complexes of different configuration was demonstrated.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey D. Darchuk, Sergey D. Darchuk, Fiodor F. Sizov, Fiodor F. Sizov, } "Oxygen concentration distribution determination in silicon wafers by semiconductor IR laser spectroscopy", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306260; https://doi.org/10.1117/12.306260
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