Paper
20 April 1998 Photostructural transformations in amorphous Ge-S thin films: a light-scattering study
N. V. Bondar, N. A. Davydova, V. V. Tishchenko, Miroslav Vlcek
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Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306242
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
Reversible changes of the Raman spectra by the cycle of band-gap laser irradiation and annealing (storing in the dark) has been observed for amorphous Ge20S80 thin films for the first time. The observed changes in the region of stretch vibrations of the chalcogenide atoms is direct evidence for the occurrence of gross structural changes in local bonding configuration cased by optical irradiation. It has been shown that under the laser irradiation the bonding tendency of the chalcogenide atoms is to form rings rather than chains, i.e. the cis-conformation is preferred over trans-conformation.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. V. Bondar, N. A. Davydova, V. V. Tishchenko, and Miroslav Vlcek "Photostructural transformations in amorphous Ge-S thin films: a light-scattering study", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306242
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KEYWORDS
Chemical species

Raman spectroscopy

Chalcogenides

Thin films

Glasses

Laser irradiation

Crystals

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