Radiation-stable infrared optical components

Nicolai D. Savchenko; T. N. Shchurova; A. Kondrat; N. I. Dovgoshej

doi:10.1117/12.306273

20 April 1998 Radiation-stable infrared optical components

Nicolai D. Savchenko, T. N. Shchurova, A. Kondrat, N. I. Dovgoshej

Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306273
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine

Abstract

High-energy electron (E equals 6.5 MeV) irradiation effect ((Phi) equals 10¹⁶ cm^-2) on the optical transmittance in the wavelength range from 0.4 micrometers to 25 micrometers for Ge, ZnSe, LiF, BaF₂, KRS-5, Csl and chalcogenide glasses of IKS-type and on the absorption edge for thin films deposited from Ge-As-Se glasses has been studied. The method of the computer-aided search for the glass compositions with the maximum stability to the high- energy irradiation has been developed. The most stable compositions of the Ge-As-Se system have been found to be the ones closed to As₂Se₃Ge₁ glass, being in the agreement with the experimental results. Experimental verification of the analysis by the testing of the both sides 5.25 micrometers antireflected BaF₂ component with two- layer antireflective coating that comprises the high- refractive layer deposited from the selected radiation stable glass Ge_16.7As_33.3Se₅₀ and the low- refractive layer of ZnS at the specified operating conditions: electron fluence (Phi) equals 4 X 10¹⁷ cm^-2s^-1, has shown the stability of its performances in the operation wavelength region.

Citation Download Citation

Nicolai D. Savchenko, T. N. Shchurova, A. Kondrat, and N. I. Dovgoshej "Radiation-stable infrared optical components", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306273

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