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20 April 1998 Radiation-stable infrared optical components
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Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306273
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
High-energy electron (E equals 6.5 MeV) irradiation effect ((Phi) equals 1016 cm-2) on the optical transmittance in the wavelength range from 0.4 micrometers to 25 micrometers for Ge, ZnSe, LiF, BaF2, KRS-5, Csl and chalcogenide glasses of IKS-type and on the absorption edge for thin films deposited from Ge-As-Se glasses has been studied. The method of the computer-aided search for the glass compositions with the maximum stability to the high- energy irradiation has been developed. The most stable compositions of the Ge-As-Se system have been found to be the ones closed to As2Se3Ge1 glass, being in the agreement with the experimental results. Experimental verification of the analysis by the testing of the both sides 5.25 micrometers antireflected BaF2 component with two- layer antireflective coating that comprises the high- refractive layer deposited from the selected radiation stable glass Ge16.7As33.3Se50 and the low- refractive layer of ZnS at the specified operating conditions: electron fluence (Phi) equals 4 X 1017 cm-2s-1, has shown the stability of its performances in the operation wavelength region.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nicolai D. Savchenko, T. N. Shchurova, A. Kondrat, and N. I. Dovgoshej "Radiation-stable infrared optical components", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306273
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