20 April 1998 Role of growth defects on carrier dynamics: semi-insulating GaAs
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Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306208
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
Using transient light-induced grating experiments, we demonstrate important consequences of interaction between photoexcited electrons and EL2 centers in semiinsulating GaAs at room temperature. Carrier lifetime is found to depend on the local density and ionization ratio of the EL2 centers. A substantial slow down of diffusive grating decay due to the interaction between electrons and photoionized EL2 donors is observed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vygantas Mizeikis, Vygantas Mizeikis, Kestutis Jarasiunas, Kestutis Jarasiunas, Jurgis Storasta, Jurgis Storasta, V. Gudelis, V. Gudelis, L. Bastiene, L. Bastiene, M. Sudzius, M. Sudzius, } "Role of growth defects on carrier dynamics: semi-insulating GaAs", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306208; https://doi.org/10.1117/12.306208
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