20 April 1998 Short-wave emission of Tb3+ as an optical indicator of TFELS matrix changes
Author Affiliations +
Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306226
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
It is shown that short-wave emission of Tb3+ may be using as an optical indicator of thin film electroluminescent structures matrix changes because that emission shows a high spectral response to the crystal field symmetry change near Tb3+ ion. Depending on the conditions of preparation of the film, the annealing temperature, the action of the gamma-ray radiation of the Tb3+ electroluminescent spectra's view corroborates the conclusion. Electroluminescent long-wave part spectra compared with short-wave part spectra at T equals 4.2 divided by 300 K regarding the dependence on film preparation conditions. Such comparisons demonstrate an advantage of using over `green' emission of `violet' emission terbium as an optical indicator.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. S. Khomchenko, V. E. Rodionov, Yu. A. Tzirkunov, "Short-wave emission of Tb3+ as an optical indicator of TFELS matrix changes", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306226; https://doi.org/10.1117/12.306226
PROCEEDINGS
6 PAGES


SHARE
Back to Top