20 April 1998 Short-wave emission of Tb3+ as an optical indicator of TFELS matrix changes
Author Affiliations +
Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306226
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
It is shown that short-wave emission of Tb3+ may be using as an optical indicator of thin film electroluminescent structures matrix changes because that emission shows a high spectral response to the crystal field symmetry change near Tb3+ ion. Depending on the conditions of preparation of the film, the annealing temperature, the action of the gamma-ray radiation of the Tb3+ electroluminescent spectra's view corroborates the conclusion. Electroluminescent long-wave part spectra compared with short-wave part spectra at T equals 4.2 divided by 300 K regarding the dependence on film preparation conditions. Such comparisons demonstrate an advantage of using over `green' emission of `violet' emission terbium as an optical indicator.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. S. Khomchenko, V. S. Khomchenko, V. E. Rodionov, V. E. Rodionov, Yu. A. Tzirkunov, Yu. A. Tzirkunov, } "Short-wave emission of Tb3+ as an optical indicator of TFELS matrix changes", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); doi: 10.1117/12.306226; https://doi.org/10.1117/12.306226
PROCEEDINGS
6 PAGES


SHARE
Back to Top