14 September 1998 Cryogenic MOST for focal plane readout electronics
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Abstract
At temperatures below 20K conventional MOS transistors continue to work, but excessive noise and current-voltage anomalies such as kink effect and hysteresis appear on their output characteristics because of carrier freeze-out in silicon. A cryogenic MOS transistor was proposed to prevent the anomalies. The paper describes the cryogenic transistor structure, its performance and the result of its application in a 64 by 1 CMOS multiplexer.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nikolai E. Bock, Nikolai E. Bock, Evgeny I. Cherepov, Evgeny I. Cherepov, } "Cryogenic MOST for focal plane readout electronics", Proc. SPIE 3360, Infrared Readout Electronics IV, (14 September 1998); doi: 10.1117/12.321757; https://doi.org/10.1117/12.321757
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