14 September 1998 Cryogenic MOST for focal plane readout electronics
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Abstract
At temperatures below 20K conventional MOS transistors continue to work, but excessive noise and current-voltage anomalies such as kink effect and hysteresis appear on their output characteristics because of carrier freeze-out in silicon. A cryogenic MOS transistor was proposed to prevent the anomalies. The paper describes the cryogenic transistor structure, its performance and the result of its application in a 64 by 1 CMOS multiplexer.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nikolai E. Bock, Evgeny I. Cherepov, "Cryogenic MOST for focal plane readout electronics", Proc. SPIE 3360, Infrared Readout Electronics IV, (14 September 1998); doi: 10.1117/12.321757; https://doi.org/10.1117/12.321757
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