22 July 1998 640x480 MCT 3- to 5-μm snapshot focal plane array
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Abstract
A 640 X 480 snapshot IRCMOS array with 25 micron pitch operating in the 3 - 5 microns range was fabricated and an image demonstrated at the Infrared Laboratory (LIR). The readout circuit with 2 pC charge handling capacity was designed and processed with a 1.2 micrometer design rules standard CMOS technology. Photovoltaic (PV) detectors were achieved by ion implantation in liquid phase epitaxy MCT layers and interconnected by indium bumps on the readout circuit. A description of the component is given and the main electro-optical characteristics are presented. The pixel operability is greater than 99.8% and a NEDT of 15 mK was measured at half dynamics. Excellent imagery has been obtained with this component operating at 77 K and f/2 optics.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick Audebert, Dominique Giotta, Eric Mottin, Philippe Rambaud, Francois Marion, "640x480 MCT 3- to 5-μm snapshot focal plane array", Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); doi: 10.1117/12.317626; https://doi.org/10.1117/12.317626
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