22 July 1998 640x480 MCT 3- to 5-μm snapshot focal plane array
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Abstract
A 640 X 480 snapshot IRCMOS array with 25 micron pitch operating in the 3 - 5 microns range was fabricated and an image demonstrated at the Infrared Laboratory (LIR). The readout circuit with 2 pC charge handling capacity was designed and processed with a 1.2 micrometer design rules standard CMOS technology. Photovoltaic (PV) detectors were achieved by ion implantation in liquid phase epitaxy MCT layers and interconnected by indium bumps on the readout circuit. A description of the component is given and the main electro-optical characteristics are presented. The pixel operability is greater than 99.8% and a NEDT of 15 mK was measured at half dynamics. Excellent imagery has been obtained with this component operating at 77 K and f/2 optics.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick Audebert, Patrick Audebert, Dominique Giotta, Dominique Giotta, Eric Mottin, Eric Mottin, Philippe Rambaud, Philippe Rambaud, Francois Marion, Francois Marion, } "640x480 MCT 3- to 5-μm snapshot focal plane array", Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); doi: 10.1117/12.317626; https://doi.org/10.1117/12.317626
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