22 July 1998 Characterization of 128x192 Si:Ga focal plane arrays: study of nonuniformity, stability of its correction, and application for the CRYSTAL camera
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Abstract
The article deals with infrared detector Si:Ga made by CENG/LETI/LIR. This extrinsic photoconductor is hybridized to a direct voltage silicon NMOS readout circuit (DVR) and works at a temperature closed to 10 K. For some years, ONERA (Office National d'Etudes et Recherches Aerospatiales) has been studying the Si:Ga by testing 32 X 32, 64 X 64 and 128 X 192 focal plane arrays. Several measurements have been done, and permit a good comprehension of the general architecture and behavior of the component, and so the realization of driving and acquisition electronic boards. Other tests have been realized, and the points of interest which will be discussed in this article are the study of the fixed pattern noise and the temporal evolution of the performances of the nonuniformity correction. Indeed, pixel nonuniformity and nonlinearity degrade array performances. Although algorithms (two points correction) have been developed to decrease this fixed pattern noise, the temporal stability of the correction has been analyzed to show if the time since the last calibration reduces its performance. So, all this knowledge about Si:Ga leads to the integration of a 128 X 192 focal plane array (FPA) in CRYSTAL (CRYogenic System for Thermographic analysis of Aerodynamic Layer) camera for ETW (European Transonic Windtunnel).
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Sabine Suffis, Sabine Suffis, Marcel Caes, Marcel Caes, Philippe Deliot, Philippe Deliot, Joel Deschamps, Joel Deschamps, Michel Tauvy, Michel Tauvy, } "Characterization of 128x192 Si:Ga focal plane arrays: study of nonuniformity, stability of its correction, and application for the CRYSTAL camera", Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); doi: 10.1117/12.317591; https://doi.org/10.1117/12.317591
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