22 July 1998 Comparison of intersubband GaAs/AlGaAs multiple quantum well infrared photodetectors on GaAs and GaAs-on-Si substrates
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Abstract
We have successfully fabricated intersubband GaAs/AlGaAs quantum well infrared photodetectors grown on GaAs-on-Si substrate and evaluated their structural, electrical, and optical characteristics. We have found that the performance is comparable to a similar detector structure grown on a semi- insulating GaAs substrate. The results are promising for applications in the important 8 - 12 micrometer atmospheric window.
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Deepak K. Sengupta, Sarath D. Gunapala, Thomas George, Sumith V. Bandara, C.-N. Chang-Chien, Rosa Leon, S. Kayali, Haochung Kuo, Wei-Chiao W. Fang, Hui Chun Liu, Gregory E. Stillman, "Comparison of intersubband GaAs/AlGaAs multiple quantum well infrared photodetectors on GaAs and GaAs-on-Si substrates", Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); doi: 10.1117/12.317609; https://doi.org/10.1117/12.317609
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