22 July 1998 GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths
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Recent improvements in mid-infrared photodetectors fabricated by the liquid phase epitaxial growth of GaInAsSb, InAsSbP, and AlGa(As)Sb on GaSb and InAs substrates are reported. GaInAsSb and InAsSbP p/n detector and AlGaAsSb/GaInAsSb avalanche photodiode (APD) structures have been fabricated. Results from previously reported devices were improved by the addition of high bandgap window layers for GaInAsSb detectors and a new longer-wavelength composition for InAsSbP detectors. Preliminary results indicate that these devices can have higher detectivity with lower cooling requirements than commercially available detectors in the same wavelength range. Infrared p/n junction detectors made from GaInAsSb and InAsSbP showed cut-off wavelengths of 2.3 micrometer and 3.2 micrometer respectively. Room temperature Johnson noise- limited detectivities (D*JOLI) of 5 X 1010 cmHz1/2/W for GaInAsSb detectors and 4 X 109 cmHz1/2/W for InAsSbP have been measured. Room- temperature avalanche multiplication gain was measured for AlGaAsSb/GaInAsSb avalanche photodiodes.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zane A. Shellenbarger, Zane A. Shellenbarger, Michael G. Mauk, Michael G. Mauk, Jeffrey A. Cox, Jeffrey A. Cox, Joseph South, Joseph South, Joseph D. Lesko, Joseph D. Lesko, Paul E. Sims, Paul E. Sims, Louis C. DiNetta, Louis C. DiNetta, "GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths", Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); doi: 10.1117/12.317602; https://doi.org/10.1117/12.317602

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