22 July 1998 High-performance IR detectors fabricated by PtSi on p-Si substrate
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High performance PtSi/p-Si Schottky-barrier detector with quantum efficiency higher than 1% has been achieved. The characteristic of PtSi/p-Si Schottky diode has been measured using both electrical and optical methods. The PtSi/p-Si diode has shown ideal I-V characteristics at different temperatures. The performance of PtSi/p-Si SBD is strongly dependent on the formation conditions of PtSi film. We have observed that the quantum efficiency of PtSi/p-Si detector is higher if the PtSi film is continuous. The formation of continuous PtSi film is crucial on the high performance of PtSi/p-Si detector. However, the formation of continuous PtSi film is strongly related to the detector dimension and formation conditions. The quantum efficiency of PtSi/p-Si SBD can be further improved if the PtSi formation temperature is increased. Transmission electron microscopy results indicate that the PtSi is epitaxially grown on Si if the substrate temperature is 550 degrees Celsius or higher. 256 X 244 PtSi/p-Si arrays monolithically integrated to read-out circuit have been fabricated using standard Si IC processes. From the measurement of uniformity and noise equivalent temperature difference of arrays, the PtSi/p-Si Schottky-barrier detector is shown to be operated under background limited condition.
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Wen-Sheng Wang, Wen-Sheng Wang, Chia Ho, Chia Ho, Tien-Ming Chuang, Tien-Ming Chuang, } "High-performance IR detectors fabricated by PtSi on p-Si substrate", Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); doi: 10.1117/12.317600; https://doi.org/10.1117/12.317600


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