22 July 1998 Performance of corrugated quantum well infrared photodetectors
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Abstract
Corrugated quantum well infrared photodetectors (C-QWIPs) use total internal reflection to couple normal incident light into the detectors. In this work, we report the performance of C- QWIPs at different wavelengths. Compared with 45 degrees edge coupling, a C-QWIP increases the background photocurrent to dark current ratio rI by a factor between 2.4 and 4.4, thereby increasing the background-limited temperature by 3 to 5 K. The detectivity D* is increased by a factor of 2.4. We applied the C-QWIP to two-color detection and obtained precision thermometric measurements. We have also fabricated and characterized a 256 X 256 C-QWIP array with cutoff wavelength at 11.2 micrometer. The uncorrected nonuniformity ((sigma) /mean) in the central 128 X 128 subarray is 2.3%. The NE(Delta) T at 63 K is estimated to be 23 mK. Furthermore, we have shown that rI can be further increased by fabrication of the C-QWIP into the corrugated hot-electron transistor structure. The enhanced performance of the corrugated structure, combined with its simple processing steps, greatly improves the QWIP technology.
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Kwong-Kit Choi, C. J. Chen, Arnold C. Goldberg, Wayne H. Chang, Daniel C. Tsui, "Performance of corrugated quantum well infrared photodetectors", Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); doi: 10.1117/12.317612; https://doi.org/10.1117/12.317612
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