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22 July 1998 Sensitive mid- and far-infrared lead telluride-based photodetectors
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Abstract
Doping of the lead telluride and related alloys with the group III impurities results in an appearance of the unique physical features of a material, such as persistent photoresponse, enhanced responsive quantum efficiency (up to 100 photoelectrons/incident photon), radiation hardness and many others. We review the physical principles of operation of the photodetecting devices based on the group III-doped IV-VI including the possibilities of a fast quenching of the persistent photoresponse, construction of the focal-plane array, new readout technique, and others. The advantages of infrared photodetecting systems based on the group III-doped IV-VI in comparison with the modern photodetectors are summarized. Some new ideas concerning the possibilities provided by the doped IV-VI are presented.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dmitriy R. Khokhlov "Sensitive mid- and far-infrared lead telluride-based photodetectors", Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); https://doi.org/10.1117/12.317630
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