31 July 1998 Analysis of quantum-wire MODFETs employing coupled well channels
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Abstract
A novel coupled well structure for implementing a quantum wire MODFET is proposed and analyzed. A thin barrier layer is placed adjacent to the standard modulation doped heterointerface, resulting in a coupled quantum well region. Varying the distance between the barrier and the interface provides a means of controlling the location and distribution of the two-dimensional electron gas. Further confinement of the carriers to one-dimension is obtained by methods known in the literature, such as mesa etching and regrowth. It has been found that the peak of the electron distribution for the first confined state, as measured from the modulation doped interface, changes dramatically depending on the location of the thin barrier. The peak can be shifted as much as 45 Angstrom for a change in the barrier location of only 20 Angstrom. Implications of this are included in the charge control model, from which the current-voltage (IdVd, Id-Vg) and transconductance (gm-Vg) characteristics are obtained. Additionally, the frequency responses (fT-Vg) of several variations of this device are presented.
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Elliot K. Heller, Syed Kamrul Islam, Guoxing Zhao, Faquir C. Jain, "Analysis of quantum-wire MODFETs employing coupled well channels", Proc. SPIE 3384, Photonic Processing Technology and Applications II, (31 July 1998); doi: 10.1117/12.317669; https://doi.org/10.1117/12.317669
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