31 July 1998 Nonlinear interface optical switch structure for dual mode switching revisited
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Abstract
There is a need for devices which will allow integration of photonic/optical computing subsystems into electronic computing architectures. This presentation reviews the nonlinear interface optical switch (NIOS) concept and then describes a new effect, the erasable optical memory (EOM) effect. We evaluate an extension of the NIOS device to allow simultaneous optical/electronic, i.e. dual mode, switching of light utilizing the EOM effect. Specific devices involve the fabrication of thin film tungsten (VI) oxide (WO3) and tungsten (V) oxide (W2O5) on the hypotenuse of glass (BK-7), fused silica (SiO2) and zinc selenide (ZnSe) right angle prisms. Chemical reactions and temporal response tests were performed and are discussed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rebecca Jane Bussjager, Joseph M. Osman, Joseph Chaiken, "Nonlinear interface optical switch structure for dual mode switching revisited", Proc. SPIE 3384, Photonic Processing Technology and Applications II, (31 July 1998); doi: 10.1117/12.317654; https://doi.org/10.1117/12.317654
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