Paper
31 July 1998 Self-guiding effects in semiconductor waveguide amplifiers
Carl Kutsche, Patrick LiKamWa, John P. Loehr, Ron Kaspi
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Abstract
An active double heterostructure diode structure is employed as a nonlinear medium to demonstrate soliton waveguiding effects. It was observed that the nonlinearities due to reverse bandfilling in active semiconductor amplifiers give rise to a spectral region where self-focusing takes place for photon energies corresponding to the peak of the gain. By monitoring the mode-profile at the output of the slab waveguide as a function of wavelength, a district narrowing of the output beam lateral dimension was observed and the beam profile appeared to stay stable for a range of input intensities. The slab waveguide was 650 micrometer long and each of the contact pads for electrical carrier injection was 60 micrometer wide. The experiments showed that the lateral dimension of the near field profile output beam changed from a FWHM width of 32 micrometer to 5.5 micrometer as the wavelength of the laser was tuned into the optimum range for self-focusing nonlinearities. This corresponds to a peak nonlinear coefficient of n2 equals 2.8 X 10-10 cm2/watt.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carl Kutsche, Patrick LiKamWa, John P. Loehr, and Ron Kaspi "Self-guiding effects in semiconductor waveguide amplifiers", Proc. SPIE 3384, Photonic Processing Technology and Applications II, (31 July 1998); https://doi.org/10.1117/12.317656
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KEYWORDS
Solitons

Optical amplifiers

Waveguides

Semiconductors

Gallium arsenide

Phase measurement

Phase shifts

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