6 July 1998 Logic design for field-effect quantum transistors
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Wave Function Rearrangement Quantum Devices (WFR QD) make it possible to create CMOS-like circuits. The major problem of logic design for WFR QD is providing logically inverting conductivity in the upper and lower quantum wells. It is shown that when the quantum wells have collinear conductivity, one quantum device correctly realizes only self-dual Boolean functions. A new configuration of WFR QD is suggested in which the upper and lower quantum wells have orthogonal conductivity. In this case, when extra separation and conjaction pads are incorporated, one WFR QD can realize an arbitrary Boolean function in the parallel-serial form.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Victor I. Varshavsky, Victor I. Varshavsky, Masaaki Kosugi, Masaaki Kosugi, } "Logic design for field-effect quantum transistors", Proc. SPIE 3385, Photonic Quantum Computing II, (6 July 1998); doi: 10.1117/12.312636; https://doi.org/10.1117/12.312636


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