Paper
23 October 1998 New layer structure of phase-change optical disk free from the initialization process
Shuichiro Ogawa, Keigo Takeguchi, Isao Morimoto
Author Affiliations +
Proceedings Volume 3401, Optical Data Storage '98; (1998) https://doi.org/10.1117/12.327942
Event: Optical Data Storage '98, 1998, Aspen, CO, United States
Abstract
In general, phase change media have to be initialized prior to recording. Initialization for phase change optical disks involves crystallization of as-deposited amorphous recording films. An initialization-free technology will lead to a low production cost, which is very important for commercialization phase change optical disks. A crystallization assisted layer (CA layer) was deposited just before the sputtering of a recording layer GeSbTe. The CA layer is assist to crystallize GeSbTe film during sputtering. We have confirmed by X-ray diffraction method that the recording layer was crystallized just after sputtering. Our proposed disk with CA layer show the similar performance to the 2.6 GBytes digital video disk- random access memory (DVD-RAM) disk.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shuichiro Ogawa, Keigo Takeguchi, and Isao Morimoto "New layer structure of phase-change optical disk free from the initialization process", Proc. SPIE 3401, Optical Data Storage '98, (23 October 1998); https://doi.org/10.1117/12.327942
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Cited by 2 scholarly publications.
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KEYWORDS
Crystals

Germanium antimony tellurium

Optical discs

Sputter deposition

Reflectivity

X-ray diffraction

Crystal optics

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