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23 October 1998 Phase-change optical disk with nitride interface layers
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Proceedings Volume 3401, Optical Data Storage '98; (1998)
Event: Optical Data Storage '98, 1998, Aspen, CO, United States
Two marked effects are obtained by forming a Ge-N interface layer on either side of Ge-Sb-Te recording layer. One effect is a suppression of atomic diffusion between Ge-Sb-Te layer and protective layers, ZnS-SiO2 representatively, which leads to a significant improvement in overwrite cyclability, and the other is the acceleration of crystallization process which leads to higher speed optical disks. A rapid-cooling type experimental disk with Ge-N layers on both sides of the Ge-Sb-Te recording layer proved to be capable of exceeding 105 cycle overwrites and a recording data rate 40 Mbps at linear velocity 12 m/s. The recording conditions: bit length 0.28 micrometer and track pitch 0.6 micrometer (L/G method) using laser source with a wavelength 658 nm and a numerical aperture 0.6 correspond to a capacity 4.7 GB/(phi) 120 mm.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Noboru Yamada, Mayumi Otoba, Kenichi Nagata, Shige-aki Furukawa, Kenji Narumi, Nobuo Akahira, and Fumiaki Ueno "Phase-change optical disk with nitride interface layers", Proc. SPIE 3401, Optical Data Storage '98, (23 October 1998);


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