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23 October 1998 Quantitative study of nitrogen doping effect on cyclability of Ge-Sb-Te phase-change optical disks
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Proceedings Volume 3401, Optical Data Storage '98; (1998) https://doi.org/10.1117/12.327951
Event: Optical Data Storage '98, 1998, Aspen, CO, United States
Abstract
By nitrogen doping into a Ge-Sb-Te phase change optical disk's recording layer, we were able to significantly increase its cyclability. For example, our PD attained, at the maximum, 800,000 overwrite cycles through accurate control of nitrogen concentration. We quantified the nitrogen concentration of recording layer using secondary ion mass spectrometry (SIMS) and determined, from the viewpoint of cyclability, signal amplitude and other parameters, the optimum concentration to be around 2 - 3 at.%. From analyses by thermal desorption mass spectrometry (TDMS) and X-ray diffraction (XD) using powder, we found: (1) nitrogen atoms are mainly bound with Ge to create an amorphous phase of Ge-N; (2) as long as the nitrogen concentration remains around 5 at.%, those Ge, Sb and Te atoms which are not bound with nitrogen form NaCl type crystals. We obtained the following model by combining the results of the above analysis. Nitrogen-doped Ge-Sb-Te recording layer is composed of Ge-Sb-Te grains intermingled with a small quantity of amorphous Ge-N, which exists in the form of a thin film penetrating the grain boundary of Ge-Sb-Te. The Ge-N composing this high-melting-point material layer appears to suppress any micro-material-flow that may occur during overwrite.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rie Kojima, Takashi Kouzaki, Toshiyuki Matsunaga, and Noboru Yamada "Quantitative study of nitrogen doping effect on cyclability of Ge-Sb-Te phase-change optical disks", Proc. SPIE 3401, Optical Data Storage '98, (23 October 1998); https://doi.org/10.1117/12.327951
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