29 June 1998 Submillimeter-wave generation with ZnGeP2 crystals
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Proceedings Volume 3403, International Conference on Atomic and Molecular Pulsed Lasers II; (1998) https://doi.org/10.1117/12.311963
Event: International Conference on Atomic and Molecular Pulsed Lasers, 1997, Tomsk, Russian Federation
This paper describes detailed analysis of optical and dielectric properties of ZnGeP2 crystals in middle IR and FIR spectral ranges, and also first experimental results on 1 W level 102 - 110 micrometers emission generation by means of difference frequency generation of CO2 laser line pairs. It is shown that MW level is achievable now, and AgIn0.35Ga0.65Se2 crystal can be used for efficient generation of FIR emission.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu. M. Andreev, Yu. M. Andreev, V. V. Appolonov, V. V. Appolonov, Yu. A. Shakir, Yu. A. Shakir, G. A. Verozubova, G. A. Verozubova, Alexander I. Gribenyukov, Alexander I. Gribenyukov, } "Submillimeter-wave generation with ZnGeP2 crystals", Proc. SPIE 3403, International Conference on Atomic and Molecular Pulsed Lasers II, (29 June 1998); doi: 10.1117/12.311963; https://doi.org/10.1117/12.311963


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