26 May 1998 CW-laser-induced spherulitic recrystallization in Sb-Se thin layer system
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Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308618
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France
Abstract
Thin layers of polycrystalline antimony and amorphous selenium are successively deposited onto a glass substrate. Under specific CW Ar+ laser irradiation conditions in these Sb/Se bilayered films, optical microscopy evidence for a spherulytic crystal growth is obtained. Phase forming is characterized by low angle X-ray diffraction, reflection high energy electron diffraction, energy dispersive X-ray analyses, and Auger spectroscopy. It is shown that, though depending on the laser irradiation conditions, the final spherulytic growth in the irradiated Sb-Se films stems from the Sb-innermost layer crystallization process. Spectacular trans-crystallization takes place through the film during laser treatment of the bilayer. An attempts at modeling this CW-laser induced recrystallization is proposed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Starbov, N. Starbov, V. Mankov, V. Mankov, K. Starbova, K. Starbova, Konstantin Kolev, Konstantin Kolev, Alain Jadin, Alain Jadin, Lucien Diego Laude, Lucien Diego Laude, } "CW-laser-induced spherulitic recrystallization in Sb-Se thin layer system", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308618; https://doi.org/10.1117/12.308618
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