Deposition of GaN thin films by laser ablation of liquid Ga target in nitrogen-reactive atmosphere

Maria Dinescu; P. Verardi; L. Vivet; Chantal Boulmer-Leborgne; Catrinel A. Stanciu; Raluca Dinu; C. Gerardi; L. Mirenghi

doi:10.1117/12.308602

26 May 1998 Deposition of GaN thin films by laser ablation of liquid Ga target in nitrogen-reactive atmosphere

Maria Dinescu, P. Verardi, L. Vivet, Chantal Boulmer-Leborgne, Catrinel A. Stanciu, Raluca Dinu, C. Gerardi, L. Mirenghi

Author Affiliations +

Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308602
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France

Abstract

Crystalline GaN thin films have been deposited by laser ablation of liquid Ga target in nitrogen reactive atmosphere. A Nd-YAG laser (l equals 1.06 mm, t_FWHM equals 10 ns) able to deliver an energy of 0.35 J/pulse was used as laser source. The nitrogen pressure was varied in the range of 10^-2 - 10^-1 mbar. As substrates sapphire plates, heated below 300 degree(s)C, were used. The characteristics of the deposited films were evidenced by different techniques as XPS, SIMS, X-ray diffraction, optical absorption spectroscopy. The Nls region of the XPS spectrum contains as main peak the one centered at 397.3 eV and corresponding to Ga-N bond. From the distance between the photoelectron Ga 3d peak and the Auger Ga LMM peak, the calculated Auger parameter of 1083.9 eV corresponds to the one reported in literature for GaN compound (1084.05 eV). SIMS profiles corresponding to N and Ga in depth- distribution carried out the presence of layers of the order of 130 - 150 nm, with uniform distribution of Ga and N inside the layer. Both techniques evidenced an oxygen contamination below 5%. XRD recorded spectra show the presence of a strong peak assigned to (002) GaN crystalline orientation. Optical absorption spectroscopy studies in the UV and visible range evidenced a high transparency for the deposited films.

Citation Download Citation

Maria Dinescu, P. Verardi, L. Vivet, Chantal Boulmer-Leborgne, Catrinel A. Stanciu, Raluca Dinu, C. Gerardi, and L. Mirenghi "Deposition of GaN thin films by laser ablation of liquid Ga target in nitrogen-reactive atmosphere", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); https://doi.org/10.1117/12.308602

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available