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26 May 1998 Deposition of dielectric PLT thin film by laser ablation
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Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308597
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France
Abstract
Lead-based ferroelectric thin films offer a wide variety of applications in dielectric, piezoelectric, pyroelectric, electro-optic, and memory devices. Among many applications, Pb-based thin films are suitable for increasing the integration of DRAM due to high relative dielectric constant. Thin films of PLT(28) Pb0.72La0.28Ti0.93O3) have been deposited on Pt/Ti/SiO2/Si substrates in situ by a laser ablation. We have systematically investigated the effect of deposition temperatures on the crystal structures and the electrical property of the films. The temperature has been varied from 500 degree(s)C to 700 degree(s)C. The crystal structures and the electrical properties of the thin films have been observed to strongly depend on the deposition temperature by C-V measurement, scanning electron microscopy, and X-ray diffraction method.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dong Seog Eun, Joo Hyung Park, Jeong Heum Park, Sang Yeol Lee, and Chang Yub Park "Deposition of dielectric PLT thin film by laser ablation", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); https://doi.org/10.1117/12.308597
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