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26 May 1998 Growth of epitaxial ZnSe and Cd1-xZnxTe films on (100)GaAs by laser ablation
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Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308639
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France
Abstract
Epilayers of ZnSe and Cd1-xZnxTe have been deposited on (100)GaAs substrates by a pulsed laser deposition technique. The ZnSe target was a polycrystalline block of high purity and the different Cd1-xZnxTe targets were either polycrystalline or cold-pressed samples obtained by mixing the binary CdTe and ZnTe powders. The surface morphology, the crystalline and optical quality of these epilayers are investigated and compared to MOCVD- grown layers.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean Louis Deiss, Jean-Luc Loison, and Michele Robino "Growth of epitaxial ZnSe and Cd1-xZnxTe films on (100)GaAs by laser ablation", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); https://doi.org/10.1117/12.308639
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