26 May 1998 Laser spectroscopy of silicon nanostructures
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Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308636
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France
Abstract
We discuss the mechanism of efficient photoluminescence (PL) from Si nanocrystals. Luminescence properties of SiO2- capped Si nanocrystals are different from those of H- passivated Si nanocrystals. The size-dependence of PL properties and resonantly excited PL spectra of SiO2- capped Si nanocrystals indicate that excitons are localized at the interface between c-Si and SiO2 surface layer. The TO-phonon related structure in resonantly excited luminescence is clearly observed in H-passivated Si nanocrystals. H-passivated Si nanocrystals show their crystalline nature, while the oxidized Si nanocrystals show their disorder nature. The luminescence properties of Si nanocrystals are discussed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshihiko Kanemitsu "Laser spectroscopy of silicon nanostructures", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308636; https://doi.org/10.1117/12.308636
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