26 May 1998 Modeling and Monte Carlo simulation of nucleation and growth of UV/low-temperature-induced nanostructures
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Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308611
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France
Abstract
A model for ultraviolet induced chemical vapor deposition (UV CVD) for a-SiN:H is described. In the simulation of UV CVD process, activate charged centers creation, species incorporation, surface diffusion, and desorption are considered as elementary steps for the photonucleation and photodeposition mechanisms. The process is characterized by two surface sticking coefficients. Surface diffusion of species is modeled with a gaussian distribution. A real time Monte Carlo method is used to determine photonucleation and photodeposition rates in nanostructures. Comparison of experimental versus simulation results for a-SiN:H is shown to predict the morphology temporal evolution under operating conditions down to atomistic resolution.
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Jean Flicstein, Jean Flicstein, S. Pata, S. Pata, L. S. How Kee Chun, L. S. How Kee Chun, Jean Francois Palmier, Jean Francois Palmier, J. L. Courant, J. L. Courant, } "Modeling and Monte Carlo simulation of nucleation and growth of UV/low-temperature-induced nanostructures", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308611; https://doi.org/10.1117/12.308611
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