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26 May 1998 Pulsed laser deposition of ZnSxSe1-xand CdSxSe1-xthin films on quartz: measurements of energy gap, absorption coefficient, and refractive index
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Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308654
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France
Abstract
ZnSxSe1-x and CdSxSe1-x thin films have been successfully deposited in optimized conditions on quartz by ablating stoichiometric cold pressed targets. From X-ray diffraction analysis the interplanar distance d for cubic ZnSxSe1-x and the c-axis value for hexagonal CdSxSe1-x thin films as a function of Sulfur concentration (x) have been calculated. From room transmittance and reflectance measurements the energy gap modulation, the absorption coefficient and the real part of the refractive index were calculated and compared with those of the corresponding bulk alloys. The analytical dependence of the energy gap and the reticular parameters d and c vs the x-value have been also deduced.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Ambrico, V. Stagno, D. Smaldone, R. Martino, G. Perna, and V. Capozzi "Pulsed laser deposition of ZnSxSe1-xand CdSxSe1-xthin films on quartz: measurements of energy gap, absorption coefficient, and refractive index", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); https://doi.org/10.1117/12.308654
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