Raman spectroscopy on BaTiO3 ferroelectric thin films deposited by a hybrid DC-field-enhanced PLD process

Thomas Klotzbuecher; M. Mergens; Andreas Husmann; Jens Gottmann; Ernst-Wolfgang Kreutz

doi:10.1117/12.308635

26 May 1998 Raman spectroscopy on BaTiO₃ ferroelectric thin films deposited by a hybrid DC-field-enhanced PLD process

Thomas Klotzbuecher, M. Mergens, Andreas Husmann, Jens Gottmann, Ernst-Wolfgang Kreutz

Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308635
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France

Abstract

Raman spectroscopy is employed for structural characterization of BaTiO₃ ferroelectric thin films, deposited by a hybrid DC-field enhanced pulsed laser deposition process. Pulsed excimer laser radiation (KrF, (lambda) equals 248 nm, (tau) equals 25 ns) is used for material removal from a sintered BaTiO₃-target in an O₂ processing gas atmosphere (pressure p(O₂) approximately equals 1 * 10^-1 mbar) with subsequent deposition on a substrate. Additional energy is supplied to the laser- induced plasma via a system of two concentric ring electrodes lying on different electric potentials (difference (Delta) V up to several hundred V), leading to further activation of the plasma and ignition of a DC- discharge in the processing gas atmosphere. Micro-Raman spectroscopy is performed with Ar⁺ laser radiation ((lambda) equals 488 nm), using a microscope unit to achieve a high spatial resolution in the range of 1 micrometers . The Raman spectra of the BaTiO₂ films show peaks typical for the tetragonal/cubic Perovskite structure. Polarization- dependent measurements reveal a mean c-axis orientation normal to the substrate surface, regardless whether a DC- field is applied or not. Using low DC-bias voltages ((Delta) V equals 50 V) allows lowering the substrate temperature without affecting the crystal quality of the films, as determined from the full width at half maximum of the Raman peaks, which is a measure for the crystal quality. High DC-bias voltages ((Delta) V equals 700 V), however, lead to amorphous films. The dielectric constant of the BaTiO₃ films is strongly correlated to the crystal quality.

Citation Download Citation

Thomas Klotzbuecher, M. Mergens, Andreas Husmann, Jens Gottmann, and Ernst-Wolfgang Kreutz "Raman spectroscopy on BaTiO₃ ferroelectric thin films deposited by a hybrid DC-field-enhanced PLD process", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); https://doi.org/10.1117/12.308635

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