26 May 1998 Subpicosecond optical studies of charge trapping and defect creation in wide-bandgap materials
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Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308608
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France
Abstract
We discuss the study of the kinetic aspects of charge trapping and defect creation which result from the intense electronic excitation caused in wide bandgap dielectrics by an intense laser irradiation. Because of the ultrashort time constants of such processes, they can only be studied using intense subpicosecond laser sources. More precisely, we present the results obtained in a number of optical material using a special interferometric measurement of the instantaneous refractive index, which allows to determine whether the photoinjected carriers are still in the conduction band or trapped in the deep defect states. Different types of materials (oxides and alkali halides) supporting excitonic charge trapping are studied, and a number of effects of the experimental conditions (in particular: excitation density and charge trapping impurity content) are described.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guillaume Petite, C. Itoh, Philippe Martin, and Stephane Guizard "Subpicosecond optical studies of charge trapping and defect creation in wide-bandgap materials", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308608; https://doi.org/10.1117/12.308608
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