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26 May 1998 Synthesis of high-quality Si1-yCy and Si1-x-yGexCy epitaxial layers on (100) Si by ion implantation and pulsed excimer laser crystallization
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Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308655
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France
Abstract
Si1-yCy and Si1-x-yGexCy layers were grown by multiple energy ion implantation of Ge and C into single crystal Si followed by pulsed excimer laser induced epitaxy. The properties of the alloy layers obtained by this technique, in terms of film crystallinity, Ge and C redistribution and substitutional incorporation, strain formation and relaxation, SiC precipitation and C- induced band gap modification are demonstrated to depend strongly on both ion implantation and laser processing conditions. The growing of large area pseudomorphic epitaxial alloys of group IV semiconductor elements, using the high energy beam excimer laser (up to 1 J/cm2 per pulse over 40 cm2) developed by SOPRA for industrial applications, is described.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean-Jacques Grob, Eric Fogarassy, Adriana Grob, Dominique Muller, Bernard Prevot, Roland Stuck, Salome de Unamuno, Pierre Boher, and Marc X. Stehle "Synthesis of high-quality Si1-yCy and Si1-x-yGexCy epitaxial layers on (100) Si by ion implantation and pulsed excimer laser crystallization", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); https://doi.org/10.1117/12.308655
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