26 May 1998 Visible photoluminescence from F-doped nanocrystallites of silicon films prepared by laser chemical vapor deposition
Author Affiliations +
Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308647
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France
Abstract
We have observed visible photoluminescence (PL) from F-doped silicon nanocrystallites films prepared in the chemical vapor deposition system. The PL spectra are in the range of 500 - 800 nm with the luminescence peak localized near 540 nm. High energy shift of the luminescence peak is discussed in terms of material structural characteristics, and a tentative explanation of light emission mechanism is proposed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. E. Dar'yushkin, A. E. Dar'yushkin, S. B. Korovin, S. B. Korovin, Vladimir I. Pustovoy, Vladimir I. Pustovoy, } "Visible photoluminescence from F-doped nanocrystallites of silicon films prepared by laser chemical vapor deposition", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308647; https://doi.org/10.1117/12.308647
PROCEEDINGS
5 PAGES


SHARE
Back to Top