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2 July 1998 Amorphous Se/CdSe and SiOx/CdSe multilayers
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Proceedings Volume 3405, ROMOPTO '97: Fifth Conference on Optics; (1998) https://doi.org/10.1117/12.312698
Event: ROMOPTO '97: Fifth Conference on Optics, 1997, Bucharest, Romania
Abstract
Amorphous multilayers based on Se and CdSe alternated sublayers were successfully prepared by thermal vacuum evaporation and laser ablation with the periodicity of 22 nm. The multilayer structure is stable up to approximately 70 degree(s)C. In the samples prepared by laser ablation a large contraction of the multilayer stacking occurs by annealing. Amorphous SiOx/CdSe multilayers with the periodicity of approximately 15 nm were successfully prepared by thermal vacuum evaporation. The structure is stable up to 400 degree(s)C annealing temperature. Pulse excimer laser irradiation of the SiOx based multilayer produces an expansion of the interlayer distance with approximately 0.33%.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mihai A. Popescu, F. Sava, A. Lorinczi, Elena Vateva, D. Nesheva, G. Tchaushev, Ion N. Mihailescu, P.-J. Koch, S. Obst, and H. Bradaczek "Amorphous Se/CdSe and SiOx/CdSe multilayers", Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); https://doi.org/10.1117/12.312698
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