Paper
2 July 1998 Enhanced internal second harmonic generation in InGaAs/GaAs/AlGaAs strained single-quantum-well buried-heterostructure laser diodes
Radu G. Ispasoiu, Niculae N. Puscas, Emil Smeu, C. E. Botez, Vladimir P. Iacovlev, Alexandru Z. Mereutza, Grigore I. Suruceanu
Author Affiliations +
Proceedings Volume 3405, ROMOPTO '97: Fifth Conference on Optics; (1998) https://doi.org/10.1117/12.312791
Event: ROMOPTO '97: Fifth Conference on Optics, 1997, Bucharest, Romania
Abstract
In this paper we report an indirect method based on photomultiplier response calibration to measure the radiant power of the internal second harmonic generation (ISHG) from InGaAs/GaAs/AlGaAs strained single quantum well buried heterostructure laser diodes. We observed enhanced ISHG radiant power, of the order of magnitude of 10-8 W. This phenomenon represents a signature of the beginning of the process of catastrophic optical degradation of the LD mirror facet layers, where the nonlinear optical interaction occurs.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Radu G. Ispasoiu, Niculae N. Puscas, Emil Smeu, C. E. Botez, Vladimir P. Iacovlev, Alexandru Z. Mereutza, and Grigore I. Suruceanu "Enhanced internal second harmonic generation in InGaAs/GaAs/AlGaAs strained single-quantum-well buried-heterostructure laser diodes", Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); https://doi.org/10.1117/12.312791
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KEYWORDS
Mirrors

Semiconductor lasers

Harmonic generation

Calibration

Quantum wells

Heterojunctions

Semiconductor materials

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