2 July 1998 Enhanced internal second harmonic generation in InGaAs/GaAs/AlGaAs strained single-quantum-well buried-heterostructure laser diodes
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Proceedings Volume 3405, ROMOPTO '97: Fifth Conference on Optics; (1998) https://doi.org/10.1117/12.312791
Event: ROMOPTO '97: Fifth Conference on Optics, 1997, Bucharest, Romania
Abstract
In this paper we report an indirect method based on photomultiplier response calibration to measure the radiant power of the internal second harmonic generation (ISHG) from InGaAs/GaAs/AlGaAs strained single quantum well buried heterostructure laser diodes. We observed enhanced ISHG radiant power, of the order of magnitude of 10-8 W. This phenomenon represents a signature of the beginning of the process of catastrophic optical degradation of the LD mirror facet layers, where the nonlinear optical interaction occurs.
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Radu G. Ispasoiu, Niculae N. Puscas, Emil Smeu, C. E. Botez, Vladimir P. Iacovlev, Alexandru Z. Mereutza, Grigore I. Suruceanu, "Enhanced internal second harmonic generation in InGaAs/GaAs/AlGaAs strained single-quantum-well buried-heterostructure laser diodes", Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); doi: 10.1117/12.312791; https://doi.org/10.1117/12.312791
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