2 July 1998 Excited xenon(1s4) atom detection by modulation laser absorption spectroscopy
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Proceedings Volume 3405, ROMOPTO '97: Fifth Conference on Optics; (1998) https://doi.org/10.1117/12.312815
Event: ROMOPTO '97: Fifth Conference on Optics, 1997, Bucharest, Romania
Abstract
A study on the space distribution of the excited xenon atoms on level 1s4 in a d.c. discharge in neon-xenon mixture is presented in this paper. The relative density of the excited xenon atoms was measured using diode laser absorption at 828.239 nm, corresponding to the xenon transition between 1s4 and 2p5 levels. A comparative analysis of the laser absorption signal and corresponding optogalvanic signal, permitted us to define a new parameter, namely optogalvanic effect efficiency, EffOG, as the size of the optogalvanic signal corresponding to an atom optically pumped by laser.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yosuke Sakai, M. A. Bratescu, Geavid Musa, Kenji Miyamoto, M. Miclea, "Excited xenon(1s4) atom detection by modulation laser absorption spectroscopy", Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); doi: 10.1117/12.312815; https://doi.org/10.1117/12.312815
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