2 July 1998 IR absorption of TiO2 thin films
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Proceedings Volume 3405, ROMOPTO '97: Fifth Conference on Optics; (1998); doi: 10.1117/12.312696
Event: ROMOPTO '97: Fifth Conference on Optics, 1997, Bucharest, Romania
Abstract
The titanium oxide films were deposited on glass by reactive sputtering system, in different oxygen partial pressure. In this paper we present the IR absorption of TiOx thin films, deposited through a d.c. circular magnetron system. We found several common peaks of absorption located around 500 cm-1, 530 cm-1, 582 cm-1, 638 cm-1 and 800 cm-1 that are corresponding to Ti- Ox links energy.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marius D. Stamate, G. I. Rusu, Ioan Vascan, "IR absorption of TiO2 thin films", Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); doi: 10.1117/12.312696; https://doi.org/10.1117/12.312696
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KEYWORDS
Absorption

Oxygen

Thin films

Sputter deposition

Oxides

Reflection

Thin film deposition

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