2 July 1998 Laser treatment of a-SiC:H thin films for optoelectronic applications
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Proceedings Volume 3405, ROMOPTO '97: Fifth Conference on Optics; (1998) https://doi.org/10.1117/12.312672
Event: ROMOPTO '97: Fifth Conference on Optics, 1997, Bucharest, Romania
Abstract
Amorphous and hydrogenated (a-SiC:H) as well as crystalline silicon carbide are widespread materials for optoelectronic applications. In this paper, we studied the effect of laser/RF plasma jet treatment of a-SiC:H thin films deposited by Plasma Enhanced Chemical Vapor Deposition, on Si wafers. A Nd:YAG laser ((lambda) equals 1.06 micrometers , tFWHM equals 14 ns, E0 equals 0.015 J/pulse) was used with a fluence of 4 mJ/cm2 incident on the sample, the number of pulses being varied. Plasma treatments were performed in a plasma jet generated by a capacity coupled RF discharge in N2. Different analysis techniques were used to investigate the films, before and after the irradiation: X-ray diffraction, X-ray photoelectron spectroscopy and transmission electron microscopy. We followed the modification of their structure and composition as an effect of the laser/plasma treatment. A comparison with the excimer and also with the RF treatments was performed.
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D. Ghica, D. Ghica, Niculae E. Mincu, Niculae E. Mincu, Catrinel A. Stanciu, Catrinel A. Stanciu, Gheorghe H. Dinescu, Gheorghe H. Dinescu, E. Aldea, E. Aldea, Viorel Sandu, Viorel Sandu, A. Andrei, A. Andrei, Maria Dinescu, Maria Dinescu, A. Ferrari, A. Ferrari, M. Balucani, M. Balucani, G. Lamedica, G. Lamedica, } "Laser treatment of a-SiC:H thin films for optoelectronic applications", Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); doi: 10.1117/12.312672; https://doi.org/10.1117/12.312672
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