2 July 1998 Optical light modulation in planar As2Se3Snx waveguides
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Proceedings Volume 3405, ROMOPTO '97: Fifth Conference on Optics; (1998) https://doi.org/10.1117/12.312685
Event: ROMOPTO '97: Fifth Conference on Optics, 1997, Bucharest, Romania
Abstract
The modulation of infrared radiation ((lambda) equals 1150 nm) in waveguides of glassy semiconductors As2Se3 and As2Se3Sn0.175 has for the first time been investigated experimentally. The measurement of frequency-response characteristic shows that there are two relaxation constans-fast and slow. The rise time of optical modulator with arsenic selenide waveguides having tin additions is nearly 10-3s. The origin of additional absorption can be explained in the framework of two-steps transition models. The first one is the excitation of excess carriers into the conducting band by highly absorbed pump beam and theirs partial capturing on localized states. The second is the re-excitation of trapped carriers and restoration of optical absorption by signal waveguided beam.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aurelian A. Popescu, Aurelian A. Popescu, Alexandru I. Albu, Alexandru I. Albu, A. Tsaranu, A. Tsaranu, } "Optical light modulation in planar As2Se3Snx waveguides", Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); doi: 10.1117/12.312685; https://doi.org/10.1117/12.312685
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