2 July 1998 UV radiation sensors with unitary and binary superficial barrier
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Proceedings Volume 3405, ROMOPTO '97: Fifth Conference on Optics; (1998) https://doi.org/10.1117/12.312705
Event: ROMOPTO '97: Fifth Conference on Optics, 1997, Bucharest, Romania
Abstract
UV radiation sensors with unitary and binary superficial barrier, made on the basis of GaP - SnO2 and GaAs - AlGaAs - SnO2 heterostructures, are presented in the paper. Technological and constructive factors, which permit to realize a high conversion efficiency and to exclude the influence of visible spectrum upon the photoanswer, are analyzed. It was established that the presence of an isotypical superficial potential barrier permits to suppress the photoanswer component formed by absorption of visible and infrared radiation in semiconductor structure bulk.
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Valerian Dorogan, Valerian Dorogan, Tatiana Vieru, Tatiana Vieru, V. Kosyak, V. Kosyak, I. Damaskin, I. Damaskin, F. Chirita, F. Chirita, } "UV radiation sensors with unitary and binary superficial barrier", Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); doi: 10.1117/12.312705; https://doi.org/10.1117/12.312705
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