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7 September 1998 Experimental characterization of CMOS APS imagers designed using two different technologies
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Proceedings Volume 3410, Advanced Focal Plane Arrays and Electronic Cameras II; (1998) https://doi.org/10.1117/12.324021
Event: SYBEN-Broadband European Networks and Electronic Image Capture and Publishing, 1998, Zurich, Switzerland
Abstract
This paper presents measurements results performed on CMOS APS imagers implemented on two different technologies. Both PhotoMOS (PM) and PhotoDiode (PD) structures have been designed by the CIMI-SUPAERO group and high APS readout rate measurements have been performed by Matra Marconi Space. Every circuit also includes the pixel's address decoders and the readout circuit required to perform on-chip correlated double sampling and double delta sampling. The aim of this paper is to compare performances of those arrays operating at 5 Volts in terms of dark current, quantum efficiency, conversion gain, dynamic range.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pierre Magnan, Cyril Cavadore, Anne Gautrand, Yavuz Degerli, Francis Lavernhe, Jean A. Farre, Olivier Saint-Pe, Robert Davancens, and Michel Tulet "Experimental characterization of CMOS APS imagers designed using two different technologies", Proc. SPIE 3410, Advanced Focal Plane Arrays and Electronic Cameras II, (7 September 1998); https://doi.org/10.1117/12.324021
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