Novel CMOS electron imaging sensor

Hod Finkelstein; Ran Ginosar

doi:10.1117/12.324019

7 September 1998 Novel CMOS electron imaging sensor

Hod Finkelstein, Ran Ginosar

Proceedings Volume 3410, Advanced Focal Plane Arrays and Electronic Cameras II; (1998) https://doi.org/10.1117/12.324019
Event: SYBEN-Broadband European Networks and Electronic Image Capture and Publishing, 1998, Zurich, Switzerland

Abstract

Electron detector arrays are employed in numerous imaging applications, from low-light-light-level imaging to astronomy, electron microscopy, and nuclear instrumentation. The majority of these detectors are fabricated with dedicated processes, use the semiconductor as a stopping and detecting layer, and utilize CCD-type charge transfer and detection. We present a new detector, wherein electrons are stopped by an exposed metal layer, and are subsequently detected either through charge collection in a CCD-type well, or by a measurement of a potential drop across a capacitor which is discharged by these electrons. Spatial localization is achieved by use of two metal planes, one for protecting the underlying gate structures, and another, with metal pixel structures, for 2D detection. The new device does not suffer from semiconductor non-uniformities, and blooming effects are minimized. It is effective for electrons with energies of 2-6 keV. The unique structure makes it possible to achieve a high fill factor, and to incorporate on-chip processing. An imaging chip implementing several test structures incorporating the new detector has been fabricated using a 2 micron double-poly double-metal process, and tested inside a JEOL 640 electron microscope.

Citation Download Citation

Hod Finkelstein and Ran Ginosar "Novel CMOS electron imaging sensor", Proc. SPIE 3410, Advanced Focal Plane Arrays and Electronic Cameras II, (7 September 1998); https://doi.org/10.1117/12.324019

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KEYWORDS

Sensors

Metals

Capacitors

Charge-coupled devices

Oxides

Signal detection

Capacitance

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