Application of dry etching to 1-Gb DRAM mask fabrication

Takashi Inoue; Yoshiki Matsuda; Yoshiyuki Tanaka

doi:10.1117/12.328863

1 September 1998 Application of dry etching to 1-Gb DRAM mask fabrication

Takashi Inoue, Yoshiki Matsuda, Yoshiyuki Tanaka

Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328863
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan

Abstract

The 1Gb DRAM generation and the 4X reticle require CD accuracy of less than 30nm, and we need breakthrough of the reticle manufacturing process and material. We think the best way to introduce dry etching and thin Cr film. First, we optimized a developing condition to improve CD accuracy and the resist sidewall because they are definite factors for lithography of dry etching. Next, we evaluated etching conditions using a design of experiment and the end point detector of the machine, which enable us to use a constant recipe despite loading effect. Additionally, we improved resist quality to decrease small defects, and we applied dry etching to 0.22 micrometers rule reticle production line. Furthermore, we investigated thin Cr film on wafer lithography and fabricated 1Gbit DRAM masks.

Citation Download Citation

Takashi Inoue, Yoshiki Matsuda, and Yoshiyuki Tanaka "Application of dry etching to 1-Gb DRAM mask fabrication", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); https://doi.org/10.1117/12.328863

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