1 September 1998 Application of dry etching to 1-Gb DRAM mask fabrication
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Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998); doi: 10.1117/12.328863
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan
Abstract
The 1Gb DRAM generation and the 4X reticle require CD accuracy of less than 30nm, and we need breakthrough of the reticle manufacturing process and material. We think the best way to introduce dry etching and thin Cr film. First, we optimized a developing condition to improve CD accuracy and the resist sidewall because they are definite factors for lithography of dry etching. Next, we evaluated etching conditions using a design of experiment and the end point detector of the machine, which enable us to use a constant recipe despite loading effect. Additionally, we improved resist quality to decrease small defects, and we applied dry etching to 0.22 micrometers rule reticle production line. Furthermore, we investigated thin Cr film on wafer lithography and fabricated 1Gbit DRAM masks.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Inoue, Yoshiki Matsuda, Yoshiyuki Tanaka, "Application of dry etching to 1-Gb DRAM mask fabrication", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328863; https://doi.org/10.1117/12.328863
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KEYWORDS
Chromium

Dry etching

Photomasks

Etching

Reticles

Lithography

Semiconducting wafers

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