Translator Disclaimer
1 September 1998 Chemical-amplification positive-resist design for 0.18-μm reticle fabrication using the 50-kV HL-800M electron-beam system
Author Affiliations +
Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328800
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan
Abstract
We have developed a novolak-based chemical-amplification resist for 0.18-micrometers reticle fabrication. This resist prevents resist footing on a chromium-oxide (CrOx) substrate by use of a matrix resin whose molecular-weight distribution is controlled. With the resist, we could fabricate 0.8-micrometers line-and-space patterns on a CrOx substrate at a dose of 6.0 (mu) C/cm2. Under the dry-air condition, the line-width change was less than 10 nm when the delay between e-beam exposure and post-exposure-baking was from 0.5 to 6 hours. When plates of the resist coating were in a chemical filter testing box under the dry-air condition, the resist sensitivity was preserved for 7 days.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadashi Arai, Toshio Sakamizu, Takashi Soga, Hidetoshi Satoh, Kohji Katoh, Hiroshi Shiraishi, and Morihisa Hoga "Chemical-amplification positive-resist design for 0.18-μm reticle fabrication using the 50-kV HL-800M electron-beam system", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); https://doi.org/10.1117/12.328800
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
Back to Top