1 September 1998 Development of a next-generation e-beam lithography system for 1-Gb DRAM masks
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Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328826
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan
Abstract
A new electron beam lithography system for masks needed in production of 1Gbit DRAM devices was developed and evaluated. The system features a variable shaped beam, 50 kV accelerating voltage, and a step and repeat stage, and incorporates new technologies, including a high resolution high current density electron optical system, a per-shot beam correction unit, a high precision beam detection system utilizing the curve fitting method, and a single-stage 20 bit beam deflection unit. The initial evaluation confirmed a minimum line-width of 100nm, a line-width uniformity of 20 nm within a field, a total positional accuracy, including field stitching and in-field positional accuracy of 20 nm and an exposure speed 3 times faster than that of the existing model, JBX-7000MVII. It was thus verified that the new EB system is capable to produce masks needed for next generation devices including 1 Gbit DRAMs.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasutoshi Nakagawa, Tadashi Komagata, Hitoshi Takemura, Nobuo Gotoh, Kazumitsu Tanaka, "Development of a next-generation e-beam lithography system for 1-Gb DRAM masks", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328826; https://doi.org/10.1117/12.328826
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