1 September 1998 Development of a next-generation e-beam lithography system for 1-Gb DRAM masks
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Proceedings Volume 3412, Photomask and X-Ray Mask Technology V; (1998) https://doi.org/10.1117/12.328826
Event: Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, 1998, Kawasaki City, Japan
Abstract
A new electron beam lithography system for masks needed in production of 1Gbit DRAM devices was developed and evaluated. The system features a variable shaped beam, 50 kV accelerating voltage, and a step and repeat stage, and incorporates new technologies, including a high resolution high current density electron optical system, a per-shot beam correction unit, a high precision beam detection system utilizing the curve fitting method, and a single-stage 20 bit beam deflection unit. The initial evaluation confirmed a minimum line-width of 100nm, a line-width uniformity of 20 nm within a field, a total positional accuracy, including field stitching and in-field positional accuracy of 20 nm and an exposure speed 3 times faster than that of the existing model, JBX-7000MVII. It was thus verified that the new EB system is capable to produce masks needed for next generation devices including 1 Gbit DRAMs.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasutoshi Nakagawa, Yasutoshi Nakagawa, Tadashi Komagata, Tadashi Komagata, Hitoshi Takemura, Hitoshi Takemura, Nobuo Gotoh, Nobuo Gotoh, Kazumitsu Tanaka, Kazumitsu Tanaka, } "Development of a next-generation e-beam lithography system for 1-Gb DRAM masks", Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328826; https://doi.org/10.1117/12.328826
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